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quiz2Sol

quiz2Sol - ECE 315 Quiz 2 Solution Fall 2005 2 si 0 Diode...

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ECE 315 Quiz 2 Solution Fall 2005 Diode equations in case: W d = x n + x p bi D A si V N N q + = 1 1 2 0 ε ε , N A x p = N D x n , 2 i D A bi n N N q kT V = , ε si is the relative dielectric constant of silicon, D n the electron diffusivity, τ n the recombination lifetime, k B the Boltzmann constant, and T the temperature (default=300K). 1. The depletion region width W d in a p + -n junction (with the p side doping of N A and the side doping of N D and N A >> N D ) is on the order of which length scale in the semiconductor: (15 pts) (a) 3 D N (b) 3 A N (c) The diffusion length of electrons as defined by n n n D L τ = (d) The diffusion length of holes as defined by p p p D L τ = (e) L n + L p as defined above. (f) The Debye length in the n-region as defined by D B si Dn N q T k L 2 0 ε ε = (g) The Debye length in the p-region as defined by A B si Dp N q T k L 2 0 ε ε = (h) Dp Dn L L (f) 2. For a semi-ideal nMOSFET, estimate the necessary gate voltage to turn off the ON current by 8 orders of magnitude (10 -8 ) at the room temperature: (a) 26mV, (b) 0.1V, (c) 0.5V, (d)

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quiz2Sol - ECE 315 Quiz 2 Solution Fall 2005 2 si 0 Diode...

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