ENGRI111_4 - Nanotechnology: Electronics -III Junction...

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    Nanotechnology: Electronics -III
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    Junction Transistor
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    p-n-p junction transistor + + + + + + + + - - - - - + + + + + + + + + + + + + + + + - - - - - + + + + + + + + + + - - Emitter Base Collector Forward Bias Reverse Bias
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    n-p-n junction transistor www.wikipedia.com
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    Input-Output Voltage
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    Transistors MOSFET Source Drain Gate Junction Transistor Two p-n junctions back to back Emitter-base-collector Emitter-base forward biased Base-collector reverse biased
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    Electrons in Atoms Rutherford – Classical model “solar system” Bohr – electrons restricted to specific orbits Energies are quantized Heisenberg – smearing (orbitals) Pauli – each orbital occupied by two electrons
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    Electrons in Atoms Electronic orbitals come in families of shells Shells: 1, 2, 3 Orbitals: s, p, d, f… (subshells) Lowest orbitals are filled first Only two electrons can occupy same orbital Atoms combine with each other by Sharing Donating acquiring
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    Electrons in Atoms n=1 (s) n=2 (s,p)
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This note was uploaded on 02/10/2008 for the course ENGRI 1110 taught by Professor Giannelis during the Spring '07 term at Cornell University (Engineering School).

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ENGRI111_4 - Nanotechnology: Electronics -III Junction...

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