ENGRI111_4 - Nanotechnology Electronics-III Junction...

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    Nanotechnology: Electronics -III
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    Junction Transistor
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    p-n-p junction transistor + + + + + + + + - - - - - + + + + + + + + + + + + + + + + - - - - - + + + + + + + + + + - - Emitter Base Collector Forward Bias Reverse Bias
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    n-p-n junction transistor
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    Input-Output Voltage
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    Transistors MOSFET Source Drain Gate Junction Transistor Two p-n junctions back to back Emitter-base-collector Emitter-baseforward biased Base-collector reverse biased
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    Electrons in Atoms Rutherford – Classical model “solar system” Bohr – electrons restricted to specific orbits Energies are quantized Heisenberg – smearing (orbitals) Pauli – each orbital occupied by two electrons
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    Electrons in Atoms Electronic orbitals comein families of shells Shells: 1, 2, 3 Orbitals: s, p, d, f… (subshells) Lowest orbitals arefilled first Only two electrons can occupy sameorbital Atoms combinewith each other by Sharing Donating acquiring
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    Electrons in Atoms n=1 (s) n=2 (s,p)
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  • Spring '07
  • GIANNELIS
  • Transistor, Bipolar junction transistor, Electronic band structure, Ene Conve rgy rsions

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