ENGRI111_7_nanofab1 - ENGRI 111 Nanofabrication MOSFET

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    ENGRI 111 ENGRI 111 Nanofabrication Nanofabrication
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    Basic Fabrication Steps Basic Fabrication Steps Oxidation Photolithography  Etching Ion Implantation Metallization
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    Thermal Oxidation Thermal Oxidation SiO Insulation layers Barrier to diffusion or implantation during device  fabrication Dry oxidation – thin films, good interphase Si (solid)  + O 2(vapor)          SiO 2(solid)   Wet oxidation –thicker films, faster process Si (solid)  + H 2 O  (vapor)          SiO 2(solid)   +     2H 2(vapor)
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    Photoresists Photoresists Used to transfer pattern Polymer (plastic) Applied by spin coating Positive Exposed area becomes more soluble Negative Exposed area becomes less soluble Sources Light, electron beam www.cnf.cornell.edu
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    Etching Etching Wet  SiO 2  + HF              H 2 SiF6  + 2H 2 O Dry Plasma Etching Plasma is an ionized gas that contains electrons,  radicals and ions
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    Etching Etching Etch rate Increases throughput Uniformity Same etch rate across wafer Selectivity Relative etch rate for different materials Damage Structural or electrical 
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ENGRI111_7_nanofab1 - ENGRI 111 Nanofabrication MOSFET

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