# Ch01p - Chapter 1 Exercise Problems EX1.1 Eg ni = BT 3 2...

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Chapter 1 Exercise Problems EX1.1 3/ 2 exp 2 g i E n BT kT = GaAs: ( ) ( ) ( ) ( ) 3/ 2 14 6 1.4 2.1 10 300 exp 2 86 10 300 i n = × × or 6 3 1.8 10 i n cm = × Ge: ( ) ( ) ( ) ( ) 3/ 2 13 6 0.66 1.66 10 300 exp 2 86 10 300 i n = × × or 13 3 2.40 10 i n cm = × EX1.2 (a) majority carrier: holes, 17 3 10 o p cm = minority carrier: electrons, ( ) 2 10 2 3 3 17 1.5 10 2.25 10 10 i o o n n c p × = = = × m cm (b) majority carrier: electrons, 15 3 5 10 o n = × minority carrier: holes, ( ) 2 10 2 4 3 15 1.5 10 4.5 10 5 10 i o o n p c n × = = = × × m EX1.3 For n-type, drift current density E n J e n μ or ( ) ( ) ( ) 19 16 200 1.6 10 7000 10 E = × which yields E 17.9 / V cm = EX1.4 Diffusion current density due to holes: ( ) 16 1 10 exp p p p p p dp J eD dx x eD L L = − = − (a) At 0 x = ( ) ( ) ( ) 19 16 2 3 1.6 10 10 10 16 / 10 p J A cm × = = (b) At 3 10 x cm = 3 2 3 10 16exp 5.89 / 10 p J A cm = = EX1.5 ( ) ( )( ) ( ) 16 17 2 2 6 10 10 ln 0.026 ln 1.8 10 a d bi T i N N V V n = = × or 1.23 bi V V = EX1.6 1/ 2 1 R j jo bi V C C V = + and

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