Ch01p - Chapter 1 Exercise Problems EX1.1 - Eg ni = BT 3 /...

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Chapter 1 Exercise Problems EX1.1 3/2 exp 2 g i E nB T kT ⎛⎞ = ⎜⎟ ⎝⎠ GaAs: () 14 6 1.4 2.1 10 300 exp 2 86 10 300 i n × or 63 1.8 10 i nc m Ge: 13 6 0.66 1.66 10 300 exp 286 10 300 i n × or 13 3 2.40 10 i m EX1.2 (a) majority carrier: holes, 17 3 10 o p cm = minority carrier: electrons, 2 10 2 33 17 1.5 10 2.25 10 10 i o o n p × == = × m c m (b) majority carrier: electrons, 15 3 51 0 o n minority carrier: holes, 2 10 2 43 15 1.5 10 4.5 10 0 i o o n pc n × × m EX1.3 For n-type, drift current density E n J en μ or ( )( )( ) 19 16 200 1.6 10 7000 10 E which yields E 17.9 / Vc m = EX1.4 Diffusion current density due to holes: 16 1 10 exp pp p dp Je D dx x eD LL =− ⎛⎞ ⎛ −− ⎜⎟ ⎜ ⎝⎠ ⎝ (a) At 0 x = ( ) 19 16 2 3 1.6 10 10 10 16 / 10 p J Acm × (b) At 3 x cm = 3 2 3 10 16exp 5.89 / 10 p J EX1.5 16 17 22 6 10 10 ln 0.026 ln 1.8 10 ad bi T i NN VV n ⎡⎤ ⎢⎥ ⎣⎦ × or 1.23 bi = EX1.6 1/2 1 R jj o bi V CC V =+ and
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() 2 17 16 2 10 ln 10 10 0.026 ln 0.757 1.5 10 ad bi T i NN VV n V ⎡⎤ = ⎢⎥ ⎣⎦ == × Then 1/2 5 0.8 1 7.61 0.757 jo jo CC ⎛⎞ =+ = ⎜⎟ ⎝⎠ or 2.21 jo Cp = F EX1.7 exp 1 D DS T v iI V =− so 31 3 10 10 exp 1 0.026 D v −− Solving for the diode voltage, we find 3 13 10 0.026 ln 1 10 D v = + or ( ) 10 0.026 ln 10 D v
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This homework help was uploaded on 02/10/2008 for the course ECE 138 taught by Professor N/a during the Spring '08 term at CSU Fresno.

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Ch01p - Chapter 1 Exercise Problems EX1.1 - Eg ni = BT 3 /...

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