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University of Pennsylvania ESE 521 The Physics of Solid State Energy Devices Due: March 20, 2013 Prof. C. R. Kagan Homework #4 1. A p-n abrupt junction with NA=1017/cm3and ND=5x1015/cm3has τp=0.1 µs and τn=0.01 µs with kT=0.026 eV, A=10-4cm2, ni=1010/cm3, µn=801 cm2/Vs and µp=438 cm2/Vs. (a) Calculate the reverse saturation current due to holes. (b) Calculate the reverse saturation current due to electrons. (c) Calculate the total reverse saturation current. (d) If VA= Vbi/2, calculate the injected minority carrier currents at the edges of the depletion region. What are the injected minority carrier concentrations at 0 and 1 µm into the bulk regions? (e) If VA= -Vbi/2, calculate the injected (depleted) minority carrier concentrations at the edges of the bulk regions? Calculate the minority carrier currents at the edges of the depletion regions. (f) At what value of VAand where in the diode will the assumption of "low-level injection" first be violated? Use the criterion of the minority carrier reaching 10% of the majority carrier concentration as the violation.