drive%20mosfet

3 ohms to 27 ohms depending on turn on speed rp 2k2 w

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Unformatted text preview: river pair. IXAN0009 SD2 C2 + ON Vcc + - SD1 Q1 OFF 2xVcc -V SD2 + t - ON 18V Zener + C1 Q2 OFF t - f sw ~ 400 KHz ~ Fig. (5) Basic Charge Pump Doubler Vcc = +15V DB V DC ~ 500VDC ~ R5 + R2 P1 V R1 CB R4 C1 2 3 R3 15V 1 D2 4 I I X X D D D or D 4 4 0 1 8 4 8 7 C2 Rgext Q4 6 5 D1 Q1 0 L CF L O A D t I/P DB : DSEP9-06CR D1 : DSEC60-12A D2 : 1N5817 C1 : 20MFD,25V C2 : 20MFD,1000 Volts,CSI 10DC0020 CB : 10MFD,25VDC P1 : 5K Trim pot Rgext: 1.0 Ohm to 4.7 Ohm CF : GE A28F5601 0.1MFD,1000 Volts R1 : 1K R2 : 10K R3 : 2K R4 : 10K R5 : 1 Ohm L : 5µH,DALE IH-5 Fig. (6) Basic bootstrap gate drive technique IXAN0009 Fig.(7) Boosting output gate drive to +/-8 A and charge pump output to 350mA for 400kHz switching of size 9 devices with the IXBD4410/4411 gate driver chip set. Fig.(8) Boosting output gate drive to +/-14 A and charge pump output to 500mA for 400kHz switching of size 9 devices with the IXBD4410/4411 gate driver chip set. IXAN0009 IXAN0009 V V t 4 3 2 t V EE = -5V I/P +Vc c=+15V I X D D 4 1 4 5 6 7 8 4 3 2 1 CF + Z2 Z1 I/ P 4 3 2 1 I X D D 4 0 8 5 6 7 8 + Rb CF Q2 I X D D 4 1 4 Rgoff Rgon I X D D or 4 0 8 Q1 Fig (9) Turn-off enhancement methods. D Rgof f D Rgon L O A D H.V.DC 5 6 7 8 Z2 Z1 Q2 D H.V.DC Z2 Z1 L O A D 1. Z1,Z2 : 18V,400mW Zener diodes 2. D : 1N5821 3. Q1 : D44VH10 4. Q2 : D45VH10 5. Rb : 10 Ohms ,1/4w,1% LOAD Rgon CF IGB T + Vcc Fig. (10). Technique to boost current output and provide -ve bias to achieve faster turn off for high power MOSF ET and IGB T Modul es 0.0V -5V +15V I /P 1 I X D D or 4 0 8 Vc c H.V. DC IXAN0009 D C B 4 3 2 1 4 3 2 I X D D 4 0 4 R7 I X D D 4 0 4 R5 + 5 6 7 8 5 6 7 8 R8 R6 T1 R1 D1 R G4 R4 D4 R G1 Vc c= 16V DC Q4 Q1 M4 LOA D Z5 Z8 D .C .S UPP LY C OMM ON Z6 Z7 M3 Z4 Z2 T3 Z3 M2 Z1 M1 Q3 Q2 R G2 R3 R G3 D3 R2 D2 D. C. SU PP LY ~ 300 to 375 V. D.C . ~ +V E SUGGESTED PARTS: 1. U1 : T.I. UC 387 5 2. T1,T2 : Coilcr aft Par t No. SD2 50-3 or Vanguar d Pulse Transformer Part No: GD 203 3. Q1,Q2,Q3,Q 4 : 2N29 05A 4. D1,D2 ,D3,D4 : DSEP8-02 A IXYS HiPer FRED 5. T3 : OUTPUT Tran sformer 6. CF : 22 MFD,35 VW DC Ta nta lum Cap acitor 7. R1,R2 ,R3,R4 : 560 Ohms, ¼ w,1% Metal film 8. M1,M2,M3,M4 : IXF N55N5 0 IXYS HiPer FET o r IXFN80N50 IXYS HiPerFET 9. Z1,Z...
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