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semiconductor switches. Reducing switching losses
then becomes the single most crucial goal. Keeping
this goal in mind, the MOSFET/IGBT Drivers should
be designed so as to yield ultra fast rise and fall
times, matching or exceeding that of the driven
MOSFET/IGBTs. Propagation delay time should be
extremely low, facilitating implementation of fast
overload/short circuit protection. Most semiconductor
switches that can withstand momentary overloads
specify 10 us as the maximum allowable duration.
From the instance of sensing overload/short circuit
to the removal of gate signals, time elapsed should
be less than 80% of the rated SCSOA time.
With the advent of IC Drivers for these fast
MOSFET/IGBTs, the designer is relieved of the
tedious task of designing elaborate driver circuits.
Nevertheless, understanding these newer ICs, their
strengths and limitations, is of paramount
importance. Different configurations for particular
topologies call for specific application knowledge.
Illustrations are the best way to explain theory and
applications of these Driver ICs.
1. B. Jayant Baliga, “Power Semiconductor
PWS Publishing Company, Boston,
2. Ned Mohan, Tore M. Undeland, William P.
Robbins: “POWER ELECTRONICS: Converters,
and Design”, John Wiley & Sons,
New York (1994)
3. Power Supply Design Seminar - 2001 series,
Unitrode Products from Texas Instruments.
4. Sam Ochi, “Driving your MOSFETs wild to obtain
efficiencies, power densities, and lower
overall costs”, Power Electronics Europe, MayJune 2002 IXAN0009 RECOMMENDED FURTHER READING
1. George J. Krausse, “Gate Driver Design for
Switch-Mode Applications and the DE-SERIES
MOSFET Transistor”, Directed Energy,Inc.
<www.directedenergy.com>. 2000 he has been with IXYS Corporation as a
Senior Applications Engineer. He has written a
number of Application Reports on the su...
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This note was uploaded on 01/15/2014 for the course ECE 624 taught by Professor Staff during the Winter '08 term at Ohio State.
- Winter '08