Exam 3 Solutions

N 10 nanoseconds 3a assume lowlevel injection no

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Unformatted text preview: ) = !4.37 " 103 E (0) = ! ECE ­606 4.37 " 103 4.37 " 103 =! = !3.12 " 102 17 !19 p ( 0 ) qµ p 2.5 " 10 1.6 " 10 350 ( )( ) 3 Spring 2013 E ( 0 ) = !3.12 " 102 V/cm Exam 3: ECE 606 3) Spring 2013 For this problem, consider a P ­type GaAs sample, moderately doped at N A = 1017 cm ­3. The semiconductor is at room temperature, in low ­level injection and is 1 micrometer long. At x = 0, !n ( 0 ) = 1014 cm ­3 At x = L = 1 micrometer, the surface recombination velocity is S B = 105 cm/sec µ n = 5500 cm2/V ­sec and ! n = 10 nanoseconds. 3a) Assume low ­level injection, no generation, and steady ­state conditions, write down the Minority Carrier Diffusion Equati...
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