B linearly with surface potential and exponentially

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Unformatted text preview: e electric field on the Si side. c) The electric field on the oxide side is smaller than the electric field on the Si side. d) The answer depends on the doping of the semiconductor. e) The answer depends on the metal- semiconductor work function difference. 1c) For a p- type MOS capacitor, how does the minority electron charge (in C/cm2) vary with surface potential and with gate voltage above threshold. a) Linearly with surface potential and linearly with gate voltage. b) Linearly with surface potential and exponentially with gate voltage. c) Exponentially with surface potential and linearly with gate voltage. d) Exponentially with surface potential and exponentially with gate voltage. e) Exponentially with surface potential and quadratically with gate voltage. 1d) Why is...
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This note was uploaded on 01/15/2014 for the course ECE 606 taught by Professor Staff during the Fall '08 term at Purdue University-West Lafayette.

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