Exam 6 ece 606 spring

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Unformatted text preview: N A = 2.7 × 1018 cm- 3 for the bulk doping QF = 0 T = 300 K Gate: p+ polysilicon gate with (EV – EF) = 0.0 and no poly depletion. 3a) The plot below is the electrostatic potential vs. position for an applied gate voltage of 0V. From this plot, deduce the following three quantities: i) the flatband voltage, ii) the surface potential (as defined in Pierret), iii) the potential drop across the oxide. ECE- 606 4 Spring 2013 Exam 6: ECE 606 Spring 2013 3b) The plot below is the absolute value of the electric vs. position for an applied gate voltage of 0V. From this plot, deduce the following three quantities: i) the electric field in the oxide, ii) the electric field at the Si surface, iii) the width of the depletion region. ECE- 606 5 Spring 2013 Exam 6: ECE 606 Spring 2013 This question concerns the gate oxide sketched below. Assume that the gate bias is such that it produces a posi...
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