C radiation induced charge build up due to trapped

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Unformatted text preview: f a MOSFET? a) A change in threshold voltage due to the breaking of Si- O bonds in P- MOSFETS that occurs under negative gate bias b) A change in threshold voltage due to the breaking of Si- O bonds in N- MOSFETS that occurs under negative gate bias c) A change in threshold voltage due to the breaking of Si- H bonds in P- MOSFETS that occurs under negative gate bias. d) A change in threshold voltage due to the breaking of Si- H bonds in N- MOSFETS that occurs under negative gate bias. e) A change in threshold voltage due to the breaking of Si- Si bonds in N- MOSFETS that occurs under negative gate bias. 2b) In NBTI, the number of hydrogen bonds broken varies as time to what power? a) one- fourth b) one- half c) three- fourths d) one e) five- fourths 2c) The “Anode hole injection model” describes what? a) The physical mechanism of NBTI. b) The physical mechanism for breaking Si- O bonds in the oxide, which leads to oxide breakdown. c) Radiation induced charge build- up due to trapped holes in a MOSFET....
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