Position for an applied gate voltage of 0v from this

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Unformatted text preview: d) The mechanism for radiation induced gate dielectric rupture. e) The movement of mobile sodium ions in the oxide. 2d) What is the most important reliability problem in modern MOSFETs? a) Hot carrier injection. b) Oxide breakdown. c) NBTI in P- MOSFETs d) NBTI in N- MOSFETs e) Radiation induced damage. 2e) What is a “percolation path” in the context of key MOSFET reliability issues? a) A collection of broken bonds in the oxide. b) A collection of broken bonds at the Si : SiO2 interface. c) A continuous path of broken bonds in the SiO2 from the Si surface to the gate electrode. d) A continuous path from source to drain of broken bonds at the Si : SiO2 interface. e) A continuous path from source to drain of broken bonds in the Si substrate. ECE- 606 3 Spring 2013 Exam 6: ECE 606 3) Spring 2013 This problem concerns the MOS electrostatics of a P- MOS capacitor using the numerical simulation program, MOSCap (https://nanohub.org/tools/moscap) on nanoHUB.org. The parameters used were for a 45 nm P- MOSFET: x0 = EOT = 1.2 nm...
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This note was uploaded on 01/15/2014 for the course ECE 606 taught by Professor Staff during the Fall '08 term at Purdue University-West Lafayette.

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