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HW8 - UNIVERSITY OF CALIFORNIA College of Engineering...

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UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 105 Prof. Wu Fall 2013 Homework Assignment #8 Due date: 5:00pm on Friday, 11/08/2013 Problem 1 [20 points]: Consider an n-channel MOSFET maintained at with the following parameters: , , , . Assume the field-effect mobility and the oxide dielectric constant . a) For small (i.e. ), calculate the MOSFET channel resistance for and explain how does change with increasing ? b) Calculate the values of drain saturation current for and . Accurately sketch the vs. curves for and for in the range from 0V to 2V. Problem 2 [20 points]: The intrinsic gain of a MOSFET is often used as a figure of merit. a) Consider a long-channel NMOSFET with , and , biased at and . What is its intrinsic gain, ? b) Note that the intrinsic gain of a long-channel MOSFET depends on , for a given bias current . Which approach would be preferable for improving the intrinsic gain: to increase W or de- crease L ? Explain briefly. c) Now consider a short-channel MOSFET with
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