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Unformatted text preview: ) Now consider a shortchannel MOSFET with
,
and
biased at
and
. What is its intrinsic gain
(Assume that the electron
drift velocity is saturated at
and
.)
d) Based on your answers to part (a) and part (c), is MOSFET scaling (miniaturization) beneficial
for amplifier circuit applications?
Problem 3 [20 points]:
For the following circuit,
,
. is a longchannel NMOSFET with , a) Estimate the bias current ( ) by assuming
. Is the transistor operating in the triode or saturation region? Justify your answer.
b) What is the maximum value of
such that the MOSFET operates in the saturation region (Assume
).
c) Assume
. Draw the smallsignal analysis circuit. Indicate numerical values for the
NMOSFET smallsignal parameters (
). Problem 4 [20 points]:
In the circuit shown below,
,
, and
. Longchannel MOSFET
(with
performance parameters
,
and
) is biased such that
.
a) What is the minimum allowable value of
if
must operate in saturation mode?
b) For
operating at the edge of saturation (e.g. with
), what are the values of
and
if the input impedance must be
?...
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This note was uploaded on 01/22/2014 for the course EE 105 taught by Professor Kingliu during the Fall '07 term at University of California, Berkeley.
 Fall '07
 KingLiu
 Electrical Engineering

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