Source bulk drain bulk junction capacitances csb cdb

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Unformatted text preview: 1 / jωCF 1 = = 1 − 1 / Av 1 − 1 / Av jω (1 − 1 / Av ) CF ZF 1 / jωCF 1 = = 1 − Av 1 − Av jω (1 − Av ) CF EE105, Fall 2013 Lecture 21 – Slide 7 Prof. Ming C. Wu ApplicaFon of Miller’s Theorem λ =0 ωin = 1 RG (1 + g m RD )C F EE105, Fall 2013 ω out = Lecture 21 – Slide 8 1 ⎛ྎ 1 ⎞ྏ RD ⎜ྎ1 + ⎜ྎ g R ⎟ྏC F ⎟ྏ ⎝ྎ m D ⎠ྏ Prof. Ming C. Wu 4 MOSFET Intrinsic Capacitances The MOSFET has intrinsic capacitances which affect its performance at high frequencies: 1.  gate oxide capacitance between the gate and channel, 2.  overlap and fringing capacitances between the gate and the source/drain regions, and 3.  source-bulk & drain-bulk junction capacitances (CSB & CDB). EE105, Fall 2013 Lecture 21 – Slide 9 Prof. Ming C. Wu High- Frequency MOSFET Model §༊  The gate oxide capacitance can be decomposed into a capacitance between the gate and the source (C1) and a capacitance between the gate and the drain (C2). –  In satura)on, C1 ≅ (2/3)×Cgate, and C2 ≅ 0. ( Cgate=CoxWL ) –  C1 in parallel with the...
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This note was uploaded on 01/22/2014 for the course EE 105 taught by Professor King-liu during the Fall '07 term at University of California, Berkeley.

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