Midterm 2 Solutions 08

208 1295 2 5pts c find the drain current a and

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Unformatted text preview: t The transistor is operating in the saturation region Problem 4. [20pts] Consider an n-channel MOSFET with a P+ polysilicon gate, a width to length ratio of 10 , and body doping of 5 10 . an oxide thickness of [5pts] (a) Calculate the threshold voltage . 0.401 Since the gate is P+ polysilicon gate the flat-band voltage is, 2 2 2 2 [5pts] (b) Calculate the body-effect factor 1 3 0.159 2 0.159 0.802 0.334 . 1 3 2 2 1.208 1.295 / 2, [5pts] (c) Find the drain current (a) and (b). Assume 1 and 1.3.) 3.5 and 2 . Use the values obtained from /...
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This note was uploaded on 01/24/2014 for the course EE 130 taught by Professor Ee130 during the Fall '07 term at Berkeley.

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