Midterm 2 Solutions 08

56 0026 ln 10 098 q ni 10 if a gate dielectric

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Unformatted text preview: SFET is fabricated on a p-type silicon wafer with N a = 1017 cm −3 . The gate is N+ polysilicon. Vt − V fb = 1.2V , μns = 300cm2 / V − s , T=300K, m=1. (a) [5pts] What is the flatband voltage, Vfb? V fb = ψ g −ψ s = − Eg 2q − ⎛ 1017 ⎞ kT ⎛ N a ⎞ ln ⎜ = −0.56 − 0.026 ⋅ ln ⎜ 10 ⎟ = −0.98 ⎟ q ⎝ ni ⎠ ⎝ 10 ⎠ If a gate dielectric with a large dielectric constant (high-κ dielectric), εox / ε0 = 25 is used as the gate dielectric, what is the required oxide thickness (Tox) to achieve Vt − V fb = 1.2V ? (b) [5pts] ⎛ 1017 ⎞...
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This note was uploaded on 01/24/2014 for the course EE 130 taught by Professor Ee130 during the Fall '07 term at Berkeley.

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