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Unformatted text preview: ) [5pts] Which recombination lifetime (that of the N side or the P side) determines
the switching speed of this diode?
N side (d) [5pts] Which side has the larger depletion region?
N side Problem 2 [20pts]
Consider a MOS capacitor with N+ polysilicon gate and N a = 5 ×1017 cm −3 (a) [10pts] The C-V characteristic of this MOS capacitor is shown below. Suppose
this MOS capacitor is used in a voltage-controlled oscillator, which
requires a capacitance tuning range of max = 1.5 , what’s the required
oxide thickness (Tox) ? Ignore p...
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This note was uploaded on 01/24/2014 for the course EE 130 taught by Professor Ee130 during the Fall '07 term at University of California, Berkeley.
- Fall '07
- Electrical Engineering