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Unformatted text preview: 0.026 V
Thermal voltage at 300K VT = kT/q PROPERTIES OF SILICON AT 300K
Symbol
Value
Description
1.12 eV
Band gap energy
EG
1010 cm3
Intrinsic carrier concentration
ni
Dielectric permittivity
εSi
1.0×1012 F/cm Note that VT ln(10) = 0.060 V at T=300K
Electron and Hole Mobilities in Silicon at 300K SCORE: 1
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80 Problem 1 [20 points]: MOS Amplifiers
1) For this problem, use the following parameters for all NMOS transistors:
VTH = 0.4 V, μnCox = 200 μA/V2, λ = 0.1V1, (W/L)1 = (W/L)2 = 10. The current source is
ideal.
VDD = 2V VDD = 2V 100 μA 100 μA vout Vb M2 vin M1 vout vin
Vb AmplifierA M2
M1 AmplifierB a) Find the small signal parameters for M1 and M2 (gm, r0). [4pts...
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This note was uploaded on 01/24/2014 for the course EE 105 taught by Professor Kingliu during the Spring '07 term at University of California, Berkeley.
 Spring '07
 KingLiu
 Electrical Engineering

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