Lecture 4_0916

30 process corners process corners describe worst

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Unformatted text preview: ce Fast: – VDD: high – T: low Corner Voltage Temperature F 1.98 0C T 1.8 70 C S 1.62 125 C 4: Nonideal Transistor Theory CMOS CMOS VLSI Design 4th Ed. 30 Process Corners Process corners describe worst case variations – If a design works in all corners, it will probably work for any variation. Describe corner with letters (T, F, S) – nMOS speed – pMOS speed – Voltage – Temperature 4: Nonideal Transistor Theory CMOS CMOS VLSI Design 4th Ed. 31 Important Corners Some critical simulation corners include Purpose nMOS pMOS VDD Temp Cycle time S S S S Power F F F F Subthreshold leakage F F F S 4: Nonideal Transistor Theory CMOS CMOS VLSI Design 4th Ed. 32...
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