Lecture 4_0916

Lecture 4_0916

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Unformatted text preview: ) Critically important at 65 nm and below (tox 4: Nonideal Transistor Theory CMOS CMOS VLSI Design 4th Ed. From [Song01] 10.5 Å) 22 Junction Leakage Reverse-biased p-n junctions have some leakage – Ordinary diode leakage – Band-to-band tunneling (BTBT) – Gate-induced drain leakage (GIDL) 4: Nonideal Transistor Theory CMOS CMOS VLSI Design 4th Ed. 23 Diode Leakage Reverse-biased p-n junctions have some leakage At any significant negative diode voltage, ID = -Is Is depends on doping levels – And area and perimeter of diffusion regions – Typically < 1 fA/μm2 (negligible) 4: Nonideal Transistor Theory CMOS CMOS VLSI Design 4th Ed. 24 Band-to-Band Tunneling Tunneling across heavily doped p-n junctions – Especially sidewall between drain & channel when halo doping is used to increase Vt Increases junction leakage to significant levels – Xj: sidewall junction depth – Eg: bandgap voltage – A, B: tech constants 4: Nonideal Transistor Theory CMOS CMOS VLSI Design 4th Ed. 25 Gate-Induced Drain Leakage Occurs at overlap between gate and drain – Most pronounced when drain is at VDD, gate is at a negative voltage – Thwa...
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This note was uploaded on 01/22/2014 for the course ECE 261 taught by Professor Morizio,j during the Winter '08 term at Duke.

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