25 t and applied normal to the large flat face of the

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Unformatted text preview: laced in a magnetic field, directed in the z- direction. The semiconductor is 1.5 cm long, and has a width of 5 mm and a thickness of 0.1 mm. The magnetic field is 0.25 T, and applied normal to the large flat face of the sample (i.e., is parallel to the “thickness” direction). The resistivity is 10.5 x 10- 4 ohm- m. If a voltage of 12 µV is applied to the ends of the sample, the Hall voltage is found to be 0.75 µV. What are the carrier density and the mobility? We first find the electric fields and current density to be 12 × 10 −6 Ex = = 0.8 mV / m 1.5 × 10 −2 75 × 10 −8 Ey = = 150 µV / m . 5 × 10 −3 E 8 × 10 −7 Jx = x = = 0.762 A / m 2 −4 ρ 10.5 × 10 Now, we find the Hall coefficient as Ey 1.5 × 10 −4 RH = = = 7.87 × 10 −4...
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This document was uploaded on 01/28/2014.

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