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Unformatted text preview: RH = Ey
−52
=
= −1.04 × 10 −3 m 3 / C
J x Bz 5 × 10 5 ⋅ 0.1 n=− 1
= 6 × 10 21 m −3 = 6 × 1015 cm −3
RH e Then, −2 2 2 µ n = − RH σ = 3.47 × 10 m / Vs = 347cm Vs
7.1 Calculate Vbi in a silicon pn junction at T = 300 K for (a) Nd = 1015 cm 3 and Na = (i) 1015, (ii) 1016, (iii) 1017, and (iv) 1018 cm 3. (b) Repeat for Nd = 1018 cm 3. To begin, the built in potential is given by(7.10) to be Using the value of ni from Table B.4, we find the following values: k T ⎛N N
Vbi = B l...
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This document was uploaded on 01/28/2014.
 Winter '14

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