Lect.6.Intrinsic.Cap

Dutton b murmann vo s 1 1 gm r av 0 vi s 1

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Unformatted text preview: xtrinsic capacitances here VB IB “Transducer” R Vo vi Ri + v gs - Cgs gmv gs R ro + vo - Ri vi VI H( s ) = R. Dutton, B. Murmann vo ( s ) 1 1 # "gm R ! = av 0 ! vi ( s ) 1 + sRi C gs 1 + sRi C gs EE114/214A 19 E x a m p le • Given: VB=2.5V, IB=500µA, W/L=20/1, R=5kΩ, Ri=50kΩ • Technology data: µCox=50µA/V2, Vt=0.5V, λ=0.1V-1, Cox=2.3fF/µm2 • Calculate: VI (such that ID=IB, VO=VB), Cgs, f-3dB VI = Vt + 2I B 1mA = 0.5V + = 1.394V W µA µCox ( + "VB ) 1 50 2 ! 20 ! ( + 0.1 ! 2.5) 1 L V 2 2 C gs = WLCox = 20 !1 ! 2.3 fF = 30.67 fF 3 3 f # 3 dB = R. Dutton, B. Murmann 11 1 1 = = 103.8MHz 2" Ri C gs 2" 50k ! 30.67 fF EE114/214A 20 H S p ic e I n p u t a n d .o p O u t p u t *** input file *** .op output element .model my_nmos nmos kp=50u vto=0.5 region + l a m b d a = 0 . 1 c o x = 2. 3 e - 3 c a p o p = 0 id 0:mn1 Saturati 499.6020u vgs 1 dc 1.394 vds 2.5020 vi vi 0 ac vb vb 0 2.5 vth ib 0 vo 5 00u gm ri vi vg 50k * *SeePS#3** gds r vb vo 5k * *SeePS#3**...
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This note was uploaded on 02/07/2014 for the course EE 214 taught by Professor Murmann,b during the Fall '04 term at Stanford.

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