Lect.6.Intrinsic.Cap

Lect.6.Intrinsic.Cap

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Unformatted text preview: ) ( ! H | -10 -2 g 10 e d 0 j [ ( H [ -10 ) ! e l g n -20 -2 A 10 10 10 -1 -1 10 0 0 10 ! *RC 10 10 1 1 10 10 2 2 We’ll come back and see this again…Lecture 24 R. Dutton, B. Murmann EE114/214A 13 M o d e lin g M O S F E T C a p a c it a n c e ( 1 ) • T o p r e d ic t th e fr e q u e n c y r e s p o n s e o f o u r C S a m p lifie r , w e n e e d to u n d e r s ta n d th e c a p a c ita n c e s a s s o c ia te d w ith th e M O S d e v ic e • W e w ill fir s t lo o k a t " in tr in s ic g a te c a p a c ita n c e " – In tr in s ic m e a n s th a t th is c a p a c ita n c e is u n a v o id a b le a n d r e q u ir e d fo r th e o p e r a tio n o f th e d e v ic e • T h e r e a r e p le n ty o f “ e x tr in s ic ” c a p a c ita n c e s a s w e ll – W e 'l l n e g l e c t t h e s e f o r t h e t i m e b e i n g a n d d i s c u s s t h e m i n d e ta il n e x t le c tu r e • To model gate capacitance, we must distinguish the MOSFET’s o p e r a tin g r e g io n s – T r a n s is to r o n • Triode and act...
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This note was uploaded on 02/07/2014 for the course EE 214 taught by Professor Murmann,b during the Fall '04 term at Stanford.

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