EECS 384 Old Exam Final

Note that the vertical scale is 104 cm3 per tick

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: ow. The depletion regions are hashed out with diagonal lines, and the depletion edges under bias are shown with vertical black lines. Assume NE = 1.1 x 1016 cm ­3, NB = 0.55 x 1016 cm ­3, NC = 0.55 x 1016 cm ­3, and assume room temperature operation. #20 (1 point) Calculate the equilibrium minority carrier concentrations in the emitter, base, and collector, and label them pn,E, np, and pn,C, respectively. For this problem, assume silicon has an intrinsic carrier concentration ni = 1.5 x 1010 cm ­3. #21 (3 points) Draw with a dashed line below the equilibrium minority carrier concentrations in the charge ­neutral regions of the emitter, base, and collector, and label them as pn,E, np, and pn,C, respectively. Note that the vertical scale is 104 cm ­3 per tick. Emitter (104 cm ­3) Base (104 cm ­3) Collector  ­xn,E (µm)  ­1 0 0...
View Full Document

Ask a homework question - tutors are online