EECS 384 Old Exam Final

Please answer the questions below according to this

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: nes is called what? #16: (1 point) Does a reverse biased p ­n junction induce recombination or generation in the depletion region? #17: (4 points) A short ­cathode, short ­anode p ­n diode is fabricated. Circle all of the following parameters which will strongly affect the reverse saturation current of this diode: a) the minority hole diffusion length b) the anode width c) the mobility of the minority electrons d) the minority electron recombination lifetime A hole (○) is in the valence band of the dispersion, shown below. Please answer the questions below according to this diagram. E k #18 (1 point) In the conduction band dispersion, draw an electron as a filled circle (•) so that it has the same velocity as the hole in the valence dispersion. #19 (1 point) If the momentum of the hole is kh and the momentum of the electron is ke, which is true: a) |kh| < |ke| b) |kh| = |ke| c) |kh| > |ke| (Questions #20 ­34) An npn silicon BJT is plotted bel...
View Full Document

This document was uploaded on 02/13/2014.

Ask a homework question - tutors are online