Quiz Team Solutions, Part II(1)

83 mev similar to the measured value between 585 and

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: F.  False if f(EA) > f (EB), then EA < EB Quiz Team SOLUTIONS, ROUND 4 ­B SHORT ANSWER: The hydrogenic impurity model (or “effec8ve Rydberg” model) works very well for electrons in GaAs, predic8ng a donor binding energy of 5.83 meV, similar to the measured value ‘ between 5.85 and 5.91 meV. #10) Name two reasons why a model for the donor binding energy of electrons in Si i‘ s more complicated than electrons in GaAs. 1) Anisotropic mass, 2) valley degeneracy TRUE / INSUFFICIENT INFORMATION / FALSE #5) The hydrogenic impurity model predicts that for an elemental semiconductor, impurity atoms from the same neighboring column of the periodic table will all have the same binding energy. T. True I.  Insufficient Informa8on F.  False #1) Assume that e ~ 3, and that at room temperature kBT ≈ 25 meV. Carbon acts as an a...
View Full Document

This document was uploaded on 02/13/2014.

Ask a homework question - tutors are online