01 ev for n polysilicon the fermi energy is at the

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Unformatted text preview: Lp 9.96 × 10 −4 eDn n p 0 1.6 × 10 −19 ⋅ 35 ⋅ 4.5 × 10 3 − I sn = − A=− 5 × 10 −4 = 4.76 fA −4 Ln 26.5 × 10 (c) − I sp = − ⎡ ⎛ 0.598 ⎞ ⎤ I p ( xn ) = 15 × 10 −15 ⎢ exp ⎜ − 1 = 0.16 mA ⎝ 0.0259 ⎟ ⎥ ⎠⎦ ⎣ (e) ⎡ ⎛ 0.598 ⎞ ⎤ I e ( xn ) = I e (− x p ) = 4.76 × 10 −15 ⎢ exp ⎜ − 1 = 0.05 mA ⎝ 0.0259 ⎟ ⎥ ⎠⎦ ⎣ I e ( xn + Lp ⎛ 1⎞ ) = I e (− x p ) + I p ( xn ) exp ⎜ − ⎟ = 0.15 mA . ⎝ 2⎠ 2 10.4 Determine the metal- semiconductor work function difference φms in a MOS structure with p- type silicon for the case when the gate is (a) aluminum, (b) n+ polysilicon, and (c) p+ polysilicon. Let Na = 6 X 1015 cm- 3. From Tables 9.1 and 9.2, we find that the work function for aluminum is 4.28 eV and the electron affinity for silicon is 4.01 eV. For n+ polysilicon, the Fermi energy is...
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This document was uploaded on 02/19/2014.

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