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# 9 8854 10 12 308 10 4 m 2 39 t ox ox xdt 12 10

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Unformatted text preview: nit area), for which we also need to have ⎛ 2.8 × 1019 ⎞ Ec − EF = 0.0259 ln ⎜ = 0.265 eV ⎝ 1015 ⎟ ⎠ φms = 4.01 − 4.01 − 0.265 = −0.265 eV Cox = 3.9 ⋅ 8.854 × 10 18 × 10 −9 −12 = 1.92 × 10 −3 m −2 = 1.92 × 10 −7 cm −2 Then, we find from (1025) that VFB = φms − Qs′s 6 × 1010 = −0.265 − 1.6 × 10 −19 = −0.315V −7 Cox 1.92 × 10 (b) VT = − EG + 2( Ec − EF ) = −1.12 + 2 ⋅ 0.265 = −0.59V . 10.23 An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness of 12 nm on a p- type silicon substrate doped at Na = 1016 cm- 3. Determine the capacitances Cox, C’FB, C’min, and C’(inv) at (a) f = 1 Hz and (b) f = 1MHz....
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