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# The governing equations are given as j voc vt ln1

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Unformatted text preview: = 0.608 + 0.082 1 − et /5×10 −7 ) mho − cm . 14.13 Consider an ideal long n+p junction GaAs solar cell at T = 300 K in which excess carriers are uniformly generated. The parameters of the diode are: Nd =1019 cm- 3, τn0 =τp0 = 5 × 10- 8 s, Dn = 225 cm2/s, Dp = 7 cm2/s. The generated photocurrent density is JL = 30 mA/cm2. Plot the open- circuit voltage as a function of the acceptor doping concentration for 1015 ≤ Na ≤ 1018 cm- 3. The governing equations are given as ⎛ J⎞ VOC = Vt ln⎜1 + L ⎟ ⎜ J⎟ S⎠ ⎝ ⎛ Dn Dp ⎞ D p ⎛ Dn L p N d ⎞ ⎟ = eni2 ⎜1 + ⎟ J S = eni2 ⎜ + ⎜ Ln N a L p N d ⎟ Lp Nd ⎜ D p Ln N a ⎟ ⎝ ⎠ ⎝ ⎠ The two diffusion lengths are Ln = Dnτ n0 = 33.5µm L p = D pτ p 0 = 5.9µm Then, D p ⎛ Dn L p N d ⎞ ⎜1 + ⎟ Lp Nd ⎜ D p Ln N a ⎟ ⎝ ⎠ ⎛ N⎞...
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