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Lecture6(3)

# Lecture6(3) - EE 332 Semiconductor Materials and Devices...

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EE 332 Semiconductor Materials and Devices Lecture 6. Distribution Statistics and Carrier Concentrations 1. Thermal equilibrium 2. Fermi-Dirac statistics 3. Carrier Concentrations

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EE 332 Spring 2013 Review— Doping n-type p-type Electrons are majority carriers Holes are minority carriers Holes are majority carriers Electrons are minority carriers
EE 332 Spring 2013 Doping in Silicon n-type Donor ionization Energy Acceptor ionization Energy p-type

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EE 332 Spring 2013 Review—Symbols Symbols Definitions n concentration of electrons in conduction band p concentration of holes in valence band n 0 equilibrium concentration of electrons p 0 equilibrium concentration of holes n i intrinsic concentration of electrons N d (N a ) concentration of donor (acceptor) N d + (N a - ) concentration of ionized donor (acceptor) N c (N v ) Effective density of states at the edge of conduction band (valence band) Intrinsic material at equilibrium ( G 0 =R 0 ) n 0 =p 0 =n i n 0 p 0 =n i 2 n-type doped at equilibrium n 0 =N d p 0 =n i 2 / N d
EE 332 Spring 2013 Charge Carrier Concentration Example: If N d = 10 15 cm -3 , n 0 p 0 =n i 2 , n 0 = N d = 10 15 cm -3 n i = 10 10 cm -3 , p 0 = 10 5 cm -3 Conductivity of semiconductor σ = n 0 q μ n + p 0 q μ p How do we calculate electron or hole concentrations ( n, p ) ?

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Lecture6(3) - EE 332 Semiconductor Materials and Devices...

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