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Lecture10(2)

# Given glight find p n 2 given silicon n find np

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Unformatted text preview: = 0) no and po n and p 2. Assume steady state illumination and solve excess electron-pair due to shining light n no n n(t ) and p(t ) 3. Solve transient decay case when light is turned off at t=0 n(t ) ne t n p(t ) pe p po p t p p(t ) no n(t ) n(t ) no p(t ) ECE 440: Mohamed Mohamed EE 332 Spring 2013 Example Example 1 A Si sample doped with 5x1014 donors and 4x1014 acceptors is illuminated with light and 1013 electron-hole pair/cm3 are created every microsecond. Assume n p 1 s. (a) Find the minority carrier concentration with steady-state illumination. (b) Draw energy band diagram with steady-state illumination of Ec, Ev, Ei, Fn, Fp (c) Find the quasi-Fermi levels Fn and Fp with steady-state illuminated relative to the intrinsic fermi level. ECE 440: Mohamed Mohamed EE 332 Spring 2013 Example 1 Solution Solution A Si sample doped with 5x1014 donors and 4x1014 acceptors is illuminated with light and 1013 electron-hole pair/cm3 are created every microsecond. Find the minority carrier concentration with steady-state illumination. Assume n p 2 s. STEP 1: D A ni N N n0 2.25 1020 N N 4 10 / cm p0 5.625...
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