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N x vbi x p 2k s 2k s o v x georgia tech o ece 3080 dr

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Unformatted text preview: o V ( x) Georgia Tech o ECE 3080 - Dr. Alan Doolittle qN D 2 Vbi xn x for 0 x x n 2K S o Potential in Depletion Region Georgia Tech EE 3080 Spring Doolittle ECE 332 - Dr. Alan2013 Movement of electrons and holes when forming the junction Depletion Width Depletion Region Approximation: Step Junction Solution Depletion Width At x=0, Depletion Width qN A xp 2K S o 2 Vbi U sin g , x p xn 2K S q o ND NA Vbi NA ND W xp xn qN D xn 2K S o xn N D and 2K S q xp o 2 NA 2K S q o ND Vbi NA NA ND NA ND Vbi NAND EE 332 Spring 2013 One-Side Junction One-Side Junction Side Junction One- EE 332 Spring 2013 Example Example Hint: Ei EE 332 Spring 2013 C Flow Flow in Equilibrium Currenturrentin Equilibrium EE 332 Spring 2013 Applying a Applying a Voltage Bias Voltage Bias EE 332 Spring 2013 Electrostatic Potential Barrier Electrostatic Potential Potential Barrier Electrostatic Barrier EE 332 Spring 2013 Electric Field Electric Field EE 332 Spring 2013 Energy Bands Energy Bands EE 332 Spring 2013 Summary of Electrostatic Chang Summary of Electrostatic Changes Summary of Electrostatic Changes Summary of Electrostatic Changes EE 332 Spring 2013 T Current Flow – Qualitative Totalotal Current Flow - Qualitative EE 332 Spring 2013 Diffusion Current Current Diffusion • Diffusion Current is dependent on potential barrier EE 332 Spring 2013 Drift Current Drift Current EE 332 Spring 2013 Rectifying Effects of Bias on Electrostatics EE 332 Spring 2013...
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