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Unformatted text preview: 13 Depletion epletion Capacitance
DCapacitance EE 332 Spring 2013 Capacitance C-V measurements
Junction Capacitance For p+-n
• Plot of 1/C2 vs V is a straight line (constant doping) and
the slope gives doping profile.
Y-intercept gives built-in voltage. EE 332 Spring 2013 Example Example EE 332 Spring 2013 Charge Storage (Diffusion) Capacitance
Capacitance in forward biased junction:
Stored charge = excess minority carries Δnp ( x) Δpn ( x') p(xn) = (ni2/ND)[eq(V + vac)/kT – 1]
EE 332 Spring 2013 AC Response of P-N Junction AC Response of P-N Junction Minority carriers are slow and may not follow AC field. EE 332 Spring 2013 Excess Carrier Profile in Long Diode
Excess Carrier Profile in Long Diode EE 332 Spring 2013 Excess Carrier Profile in Short Diode
Excess Carrier Profile in Short Diode EE 332 Spring 2013 Current in Short and Long Diode
Current in Short and Long Diode
Current in Short and Long Diode EE 332 Spring 2013 Short Diode I-V Diode I-V
Short EE 332 Spring 2013 Current in One-Sided -N Junction
Current in One-Sided P-NPJunction EE 332 Spring 2013...
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This document was uploaded on 02/18/2014.
- Spring '09