Lecture18 c2

# Multiplication electron multiplication mn noutnin 1 p

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Unformatted text preview: ion and carrier multiplication Electron Multiplication Electron Multiplication Mn = nout/nin = 1 + P + P2 + P3 + … =1/(1--P) M = n /n = 1 + P + P2 + P3 + … =1/(1 P) n out in Empirical Relation Empirical Relation M = 1/[1--(V/Vbr))n]] n=3~6 M = 1/[1 (V/V n n=3~6 br EE 332 Spring 2013 Avalanche Breakdown Mechanism Avalanche Breakdown Mechanism AvalancheBreakdown Mechanism EE 332 Spring 2013 Breakdown Voltage Break Down Voltage EE 332 Spring 2013 Comparison Comparison EE 332 Spring 2013 Breakdown Temperature Dependence •  For the avalanche mechanism: VBR increase with increasing T (Mean free path decreases) •  For the tunneling mechanism: VBR decreases with increasing T (Flux of valence-band electrons available for tunneling increases) EE 332 Spring 2013 Model the diode as a single piecewise linear segment that passes through the bias point Small-Signal Circuit Diode Small-Signal Circuit Model of PP-N Di Small-Signal Circuit Model of P-NModel of -N Dio id R + vs(t) Small Signal Diode Model vd(t) cewise linear tangential approximation passing through the bias model represents the exact dc solution gnalV small, we can assume that the diode variation in current due is S _ variation in voltage follows the piecewise linear approximation ID id VD vd slope=1/rd Lecture 10-27 ID VD vd Lecture 10-28 EE 332 Spring 2013 P-N Junction Capacitance P-N Junction Capacitance Cdep = Cj = Voltage-Variable Capacitance CD = Cs = Charge Storage Capacitance EE 332 Spring 20...
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## This document was uploaded on 02/18/2014.

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