Lecture15(1)

Alan doolittle qn d 2 vbi xn x for 0 x x n 2k s o

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Unformatted text preview: Vbi x p 2K S 2K S o V ( x) Georgia Tech o ECE 3080 - Dr. Alan Doolittle qN D 2 Vbi xn x for 0 x x n 2K S o Potential in Depletion Region Georgia Tech EE 3080 Spring Doolittle ECE 332 - Dr. Alan2013 Movement of electrons and holes when forming the junction Depletion Width Depletion Region Approximation: Step Junction Solution Depletion Width At x=0, Depletion Width qN A xp 2K S o 2 Vbi U sin g , x p xn 2K S q o ND NA Vbi NA ND W xp xn qN D xn 2K S o xn N D and 2K S q xp o 2 NA 2K S q o ND Vbi NA NA ND NA ND Vbi NAND EE 332 Spring 2013 One-Side Junction One-Side Junction Side Junction One- EE 332 Spring 2013 Example Example Hint: Ei EE 332 Spring 2013 LinearlyLinearly Junction Graded Graded Junction EE 332 Spring 2013 Movement of electrons and holes when forming the junction Biased P-N Junction Next Lecture: Biased P-N Junction Depletion Region Approximation: Step Junction Solution Vbi VA=0 : No Bias Vbi VA<0 : Reverse Bias |VA| VA>0 : Forward Bias |VA| Vbi Low level injection leads to no spatial difference in Fermi Level Vbi Georgia Tech ECE 3080 - Dr. Alan Doolittle EE 332 Spring 2013 Current Flow Current Flow - Qualitative Zero Bias diffusion drift diffusion Reverse Bias drift Forward Bias VA>0 EE 332 Spring 2013...
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This document was uploaded on 02/18/2014.

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