Lecture15(1)

Fin quasi fermi levels fn every p concentration with

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Unformatted text preview: cceptors is illuminated ectron-hole pair/cm3 are createdand F microsecond. Fin Quasi-Fermi Levels (FN every P) concentration with steady-state illumination. Assume n p D op N A n0 2.25 1020 N D N A 4 1014 / cm3 p0 5.625 105 / cm n no n 4 1014 1013 EHP find EHP: 3 cm . s l injection holds. s since ⋅p≠ n 2 is less n p n i rity carrier doping (no) n ⋅ p = NC NV e − Eg / kT p po p 1013 EHP p n gop . p 2 s 2 3 cm . ECE 440: s p n gop. p no 4 1 Mohamed Mohamed e ( FN −FP ) / kT 2.25 10 n 13 p 2 10 14 no 4 10 2 i 13 3 20 2 ( FN −FP ) / kT i =n e Minority Carrier EE 332 Spring 2013 Concentration Diffusion Net Current at Equilibrium Zero EE 332 Spring 2013 Continuity Equation and Diffusion Length Steady State Carrier Injection EE 332 Spring 2013 So far: •  •  •  •  •  •  Energy band, Doping, Fermi level Conductivity: semiconductor resistors (p-type and ntype) Drift (~ n*v) and diffusion (~dn/dx); Einstein relation (D/μ=kT/q) Majority/minority carriers with optical generation Quasi-Fermi levels Diffusion/recombination EE 332 Spring 20...
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This document was uploaded on 02/18/2014.

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