4 ecen 475 11 n diffusion pattern oxide and form n

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Unformatted text preview: -aligned gates because it doesn’t melt during later processing n+ Diffusion 000000000000 000000000000000000000000000000000000000000000000000000000000000000000000000000 0000000000000000000000000000 0000 0000 0000 00000 00000 00000 00000 n well p substrate ECEN 475 32.4 N-diffusion cont. Historically dopants were diffused Now ion implantation is used But the resulting regions are still called diffusion 000000000000000000000000000000000000000 000000000000000000000000000000000000000000000000000000000000000000000000000000 00000 n+ 0000 0000 0000 n+ n+ 0000000000 00000 00000 00000 0000000000000000000000000000 n well p substrate 42.4 ECEN 475 12 N-diffusion cont. Strip off oxide to complete patterning step 00000 00000 00000 00000 00000 00000 n+ 0000 0000 0000 0000 n+ n+ n well p substrate ECEN 475 52.4 P-Diffusion Similar set of steps form p+ diffusion regions for pMOS source and drain and substrate contact p+ Diffusion 0000000000 p+ n+ 0000000000 00000 00000 00000 00000 0000 0000 0000 0000 n+ p+ p+ n+ n well p substrate 62.4 ECEN 475 13 Contacts Now we need to wire together the devices Cover chip with thick field oxide Etch oxide where contact cuts are needed Contact 0000000000000000000000000000000000000000 00000000000...
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This document was uploaded on 03/02/2014.

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