4 ecen 475 9 strip oxide strip off the remaining

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Unformatted text preview: lar series of steps n well p substrate ECEN 475 91.4 Polysilicon Deposit very thin layer of gate oxide < 20 Å (6-7 atomic layers) Chemical Vapor Deposition (CVD) of silicon layer Place wafer in furnace with Silane gas (SiH4) Forms many small crystals called polysilicon Heavily doped to be good conductor 00000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000000 00000000000000000000000000000000000000000000000000000000000000000000000 00000000000000000000000000000000000000000000000000000000000000000000000 00000000000000000000000000000000000000000000000000000000000000000000000 00000000000000000000000000000000000000000000000000000000000000000000000 Polysilicon Thin gate oxide n well p substrate 02.4 ECEN 475 10 Polysilicon Patterning Use same lithography process to pattern polysilicon 000000000000000000000000000000000000 000000000000000000000000000000000000 000000000000000000000000000000000000 00000000000...
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This document was uploaded on 03/02/2014.

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