4 gnd 5 detailed mask views six masks n well

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Unformatted text preview: + diffusion Contact Metal n well 0000000000000000000 0000000000000000000 0000000000000000000 0000000000000000000 0000000000000000000 0000000000000000000 0000000000000000000 0000000000000000000 0000000000000000000 00 00 00 Polysilicon n+ Diffusion p+ Diffusion 000000000 000000000 000000000 000000000 000000000 000000000 000000000 000000000 000000000 000000000 000000000 000000000 000000000 000000000 0000000000 0000000000 0000000000 0000000000 0000000000 0000000000 0000000000 0000000000 00 0000000000 00 0000000000 00 0000000000 0000000000 0000000000 0000000000 Contact 00000000000000 00000000000000 00000000000000 00000000000000 ECEN 475 Metal 11.4 Fabrication Steps Start with blank wafer Build inverter from bottom up First step will be to form the n-well Cover wafer with protective layer of SiO2 (oxide) Remove layer where n-well should be built Implant or diffuse n dopants into exposed wafer Strip off SiO2 p substrate 21.4 ECEN 475 6 7 41.4 ECEN 475 p substrate SiO2 Photoresist 00000000000000000000000000000000...
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This document was uploaded on 03/02/2014.

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