4 inverter cross section typically use p type

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Unformatted text preview: use p-type substrate for nMOS transistors Require n-well for body of pMOS transistors VDD 00000000 00000000000000000000 00000000000000000000000 00000000000000000000 00000000 Y 000000000000000000000000000000000000000000000000000000000000 000000000000000000000000000000000000000000000000000000000000 000000000000000000000000000000000000000000000000000000000000 00000000000 00000000000000000000000000000 00000000000 00000000000 00000000000000000000000000000 00000000000 p+ p+ n well p substrate nMOS transistor ECEN 475 SiO2 n+ diffusion p+ diffusion 000000 000000 000000 000000 000000 000000 polysilicon metal1 pMOS transistor 8.4 n+ n+ 0000000000000000 A GND 4 Well and Substrate Taps Substrate must be tied to GND and n-well to VDD Metal to lightly-doped semiconductor forms poor connection called Shottky Diode Use heavily doped well and substrate contacts / taps A GND VDD 000000000000000000 000000000000 000000000000000000000000000000000 00000000000000000000000000000000000000000000000000 000000000000000000000000000000000 000000000000 0000000000000000 Y 00000000000000000000000000000000000...
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