4 negative lithography ultraviolet light chrome

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: ubstrate Silicon substrate Resulting pattern after the resist is developed. 24.4 ECEN 475 21 Positive Lithography Ultraviolet light Areas exposed to light are dissolved. Chrome island on glass mask Shadow on photoresist Island Window photoresist Photoresist Exposed area of photoresist photoresist Photoresist oxide Oxide oxide Oxide silicon substrate Silicon substrate silicon substrate Silicon substrate Resulting pattern after the resist is developed. ECEN 475 34.4 Lens Capturing Diffracted Light Quartz UV Mask Diffraction patterns Chrome 4 4 3 2 2 1 3 1 0 Lens 44.4 ECEN 475 22 Effect of Numerical Aperture (NA) Pinhole masks Lens NA Image results Bad Poor Good Diffracted light ECEN 475 54.4 Optical Proximity Effects Rounded corners ECEN 475 Shortened lines 64.4 Nonuniform CDs 23 Optical Proximity Correction (OPC) Uncorrected design (b) Corrected with feature biasing ECEN 475 (c) Feature assisting technique 74.4 (a) 24...
View Full Document

Ask a homework question - tutors are online