ECE340_L11_S14_Distribution

# X dt dpx dt field dpx dt collision px tn dpx dt

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Unformatted text preview: at Equilibrium •  Assignments •  Topics for Next Lecture 3 Conduc[vity and Mobility Drih in a Semiconductor Assume uniform distribution of carriers: no diffusion + - 5 Electron and Hole Current Density Rela[onship Electrons: (− q )nEx = dp Holes: qnEx = x dt dpx dt field dpx dt =− collision px tn dpx dt + collision dpx dt =0 field field Electric ﬁeld causes accelera[on of the group of electrons (holes) in the crystal Interac[on of electrons (holes) with the crystal creates an opposing force to the applied electric ﬁeld The opposing force from the crystal balances the force due to the applied electric ﬁeld at some mean value of velocity for the distribu[on of electrons (holes) The mean value of the electron (hole) velocity mul[plied by the electron (hole) density mul[plied by the charge carried and sign of the charge (- /+) gives the current density The rela[onship between the value of the electric ﬁeld and the mean value of the electron (hole) velocity at that ﬁeld gives the mobility The mean velocity is the total momentum of all electrons (holes) divided by the total mass of all electrons n༉mn* J x,n = −qn vx = qnµn Ex J x, p = qp vx = qpµ p Ex q tn E x = − µn E x * mn qtp vx =...
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## This note was uploaded on 03/06/2014 for the course ECE 340 taught by Professor Leburton during the Spring '11 term at University of Illinois, Urbana Champaign.

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