step 1 formation of trichlorosilane liquid tboil 32

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: Mass Density: The density of a plane of material •  Packing Frac\on: Volume within a unit cell occupied by atoms if the atoms are assumed to be hard spheres with a radius of half the atomic spacing –  Note: It is only in the case of the simple cubic structure that the lance constant is the same as the atomic spacing 7 Silicon Purifica\on Formation of Metalurgical-Grade Silicon (MGS): SiO 2 + 2C → Si + 2CO (~1800 C) Purification of MGS (Removal of Al, Fe, heavy metals, etc.): Step 1: Formation of Trichlorosilane (liquid, TBoil = 32 C) Si + 3HCl → SiHCl3 + H 2 Step 2: Fractional Distillation Step 3: Conversion of Trichlorosilane to Electronic-Grade Silicon 2SiHCl3 + 2H 2 → 2Si + 6HCl 9 Bulk Growth 10 Silicon Ingot 11 Lance Matched Systems Heteroepitaxy: Grown materials are lance matched but have different proper\es than the substrate 13 Strained Layers •  Pseudomorphic Growth:...
View Full Document

Ask a homework question - tutors are online