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Topic 03 Prb Solns

# Topic 03 Prb Solns - 4.9 Calculate the drain current in an...

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Unformatted text preview: 4.9. Calculate the drain current in an NMOS transistor for V65 = 0., 1 V, 2V, and3 V, with VDS = 0.1V, ifW :10 p.111, L ..—... 111.111, VTN = 1.5V: and K; = 250 .uIAfVZ. What is the value of K"? ((1)0 <1.5V —>ID =0 (b) 1V <1.‘5V—>ID =0 (e) V6.5 — V... =0.5V, VDS =0.IV—>triode region _ .W . V ,uA 10,um 0.1 ID —KHT[VGS—Vm—~%}’DS=[250V W 2—1.5—7 0.1)=+113;LA (d) VGS— Vm =1.5V, VDS =0.lV—>triode region _ . W VDS #4 101.1111 0.1 In ”KnT[VG "thT}/DS=[250—sz- W 3‘15“? 0.1)3+363‘UA (e)Kn=K;E= 250%- M #50341 L V 1m V2 4.15. What is the on—resistance of an NMOS tran— sistor with W/L=100/1 if Vcs=5 V and VTN = 0.75 V? (b) If V63 2 3.3 V and VTN = 0.60 V? (See Table 4.6.) 1 1 (a)Ra.=——-‘ W = 100 =94.IQ -K.E(VGs—Vm) 25x10'6i—1—E5—035) ‘ 1 b R = = ( ) m. 6 100 148 9 25x10‘ —1- 3.3—0.60) 4.24. Calculate the drain current in an NMOS transistor for VGS = O,1V,2V,and3V,with VDS 24V, ifW=10p.m,L 21p.In,V1—N =1.5V,and KEV :4 250 ”AN? Whatis the value of K"? Check the saturation region assumption. 4.24 . (a) For VS: 0 V55 < er andID =0 (b) For V63 =1 V, 'VGS < Vm and ID = O (c) VGS- = 2-1.5=0.5Vand VDS— — 4 | VDS > (VGS 4 er) so the saturation region is correct 250 pA 10pm 2 W ”.4 10pm mA =—--— 2— 1. V =313 A Kn =Kn—=250— =.25-——- I” 2 WV2[ 1am } 5) ‘u I L V2 1am V2 (d) V03 __ Vm ,2 3 -1‘5 =1,5V and Vns = 4 | VDS > (VGS — Vm) so the saturation region is correct 102250241an 3—1.225)V =2.81mA 2 V1 1pm 4.26. Find the region of operation and drain current in an NMOS transistor with W/L = 10/1 for VTN = 0.75 V and (a) VGS = 2 V and v35 = 0.2 V, (b) VGS :ZVandVDs = 2.5V,(C) VGS 20V and VDS = 4 V. 4.26 (a) VGS - VTN = 2 — 0.75 = 1.25 v and VDS = 0.2 v. VDs < Vos — Vm so the transistor is operating in the triode regon. .W V M 10 ' 0.2 ID 57-1121 T(VGSth——;€' DS=[25—VTI"1—IZ“0...7S——2—})2=575 [JA (b) vGS - VTN = 2 — 0.75 = 1.25 V and VDS = 2.5 v. Vns > Vos - VTN so the transistor is Operating in the saturation region. K]; W 25 10 ID- _ 2 6.5— m) =[—2— 1% T}2—0.75)2=195 M (c) VGS < VTN so the transistor is cutoff with ID = O. 4.31 Calculate the transconductance for an NMOS tran— sistor for V95 = 2 V and 3.3 V, with VDS = 3.3 V, if W = 10 p.me : 1 1.1.111,er = 0.7 V, and K; = 250 tLAfVZ. Check the saturation region assumption. 4.31 VDS = 3.3V, VGS - VTN = 1.3 V; VDs > Vos — VTN so the transistor is saturated. (a)gm =K,,(VGS VIN): 25(JI'L’310~—‘uﬂ 2— 0.7): 3.25mS V 1pm (b)gm=,,K(VGS—Vm):250”;1[1——0Hm}3.3—0.=7) 650mS V Lum i \ z w a 4.33 (a) Calculate the drain current in an NMOS tran— sistor if Kn = 250 [.LA/VZ, VTN = 1 V, A : 0.025 V‘l, V35 2 5 V, and VDS = 6V. (b) Repeat assﬁming l = 0. 4.33 VDS > VGS - VTN so the transistor is saturated. (d)ID=— 711(25— m)(11%3)=2—2~50M(5—1)(1+0025(6)) 2.30m SW me—z—Some 1) -200mA (5) ID = 4.43. RepeaLProb. 4.26 for V53 : 1.5 V with the values from Table 4.6 4.43 (a) VIN = 075+ 0.75 4/15 + 0.6 —x/0.6)=1.26V V05 — Vm = 2 +1.26: 0. 74V > VDS = 0.2V => Triode region ID =250x10‘6(2-— 1 26—0—22— .2 =32.0 114 (compared to 57.51111) 00) VGS — VIN = 2 —1.26 = 0.74V < VDS = 2.5 V => Saturation region ID =i0’gﬂau126f = 68.5 11.4 (compared to 195 pA!) (c) VGS < VTN so transistor is cutoff and ID = 0. W 4.51. Find the region of operation and drain current in a PMOS transistorwith W/ L = 10/1 for V35 = 0V and (a) V65 : "—1.1V and V35 = —0.2 V and (b) VGS = #1. 3 V and VDS — w0.2 V. (6) Repeat parts (a) and (b) for V3; = 1V. . 1'11 (a)V nD-=_1 1+ 0. 75-— " —0. 35V | V133: —0. 2V —9 Triode region 10104 V1_0 V2 1 (b) VGS— VTP=—1.3—0.75=0.55V | VDS=—0.2V—>Trioderegion ID = 1:? Lil[51.3_(_0_75)__(;‘;_21 —0.2)= 9.00 11.4 ' (e) V”. = {1.75 + .5 (41+ .6 4:15)]: -0.995V VGS — V”, = —1.1—(—0.995)= -—O.105V | VDS = —0.2V -> saturation region JD: 361—0” 1—1-}11+0.995) =0.551pA ID: —1.1—(—0 75)—(i—)](—0 2): 5 00 11A V (41WGs + V”. = —1.3+0.995 =—0. 305V | VDS = 0. 2V —> triode region ID = 1%! [391—1.3—(—0.995)——u_ ‘0 —--—)2J(—0.2)= 4.10 11.4 4.54. (a) Caiculate the Dir-resistance for a PMOS tran- 4.54 1 For PMOS: R0,, z—VT— (a) R0,, = I =235 Q KI —VGS—VTPI 10—5 ﬂ —5~(—0 751 I P L l ' 1 . (:2) Ron z =94.1o (c) K: 4 1 5239 25x1“ 199 54.75) L. 10x10 l——5—(—0.7Sj(94.1) I 1 4513. What are the values of C03 and Car) for a tran- 4.73 CGS sistor having W/L : 100/1 and operating with V33 = —S V and VT? = e075 V. (b) Repeat for a similar NMOS transistor with VGS = 5 V and VIN = 0.75 V. (c) What W/ L ratio is required for the PMOS transistor to have the same Ron as the NMOS transistor in (b)? sister with C3,. = 1.4 x 10-3 F/mz and 001: = 4x 10‘9 F/mifW = 10 nmandL =1nmop- erating in (a) the triode region, (b) the saturation region, and (c) cutoff? (a) C"WL . . =CGD=-—0—X2——+C0LW= (b) C63 =3C5XWL+CGLW =—:—14ﬂ7+40fF=49 fF 3 Can = (3ng :[4x10—15—F—}10,um)= 40 fF , ,um (C) . _15 F CGS : CGD = COLW = 4x10 1:”: }10pm)=40 fF ...
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