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Unformatted text preview: V OUT V IN Q R B0 R C0 V DD = 3.0V 2.0 k 10 k Driving Gate EE 307 W07 MIDTERM EXAM #2 Braun CLOSED BOOK + 2 Cheat Sheets State assumptions and show work. Print Your Name: SOLUTIONS No unauthorized help given or received. For example, I will not discuss this midterm with anyone until after 11:00 today. Signature: BRAUN 1. RTL & TTL. Assume V IH(TTL) = 1.50 V and V IL(TTL) = 0.50 V. Please use V BE(EOC) = V D(EOC) = V BE(ON) = V D(ON) = 0.70V, V BE(SAT) = 0.80V, V CE(SAT) = 0.10V, and b F =40 , b R = 0.2 for all BJTs and diodes V SBD(ON) = 0.40V for Schottky diodes; V BE(EOC) = 0.70V, V BE(ON) = 0.80V for Schottky clamped BJTs. A) Determine V OH for the RTL gate shown to the right for a fan-out of zero. Explain. With Q Off, V OH = V DD = 3.0 V B) What is the value of I IH for the TTL gate ( below right)? V B1 = V BE(SAT)3 + V BE(SAT)2 + V BC(ON)1 with Q 1 Reverse Active and = 0.80 V + 0.80 V + 0.70 V = 2.30 V Q 2 & Q 3 Saturated. mA 50 . k 4 . 5 V 3 . 2- V . 5 1 1 = =- = = B B CC RB B R V V I I mA 10 . mA) 50 . )( 2 . ( 1 1 = = = = B R E IH I I I b C) When the RTL gate (above right) drives five TTL gates (below...
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This note was uploaded on 04/07/2008 for the course EE 307 taught by Professor Braun during the Winter '08 term at Cal Poly.
- Winter '08