The expression with gds0 is more accurate and should

Info iconThis preview shows page 1. Sign up to view the full content.

View Full Document Right Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: noise (strong inversion) – Drain current (use gds0 not gm) γ = 2/3 for small fields (long L) can be 1-2 or even larger for short L • Since the expression with gm is convenient for input referred noise calculations, it is often used. The expression with gds0 is more accurate and should be used. The factor α captures the drop in gm for a short channel device. • Gate induced noise (142/242 topic) • Gate current (leakage shot noise) • No noise from ro (not physical resistor) • Extrinsic noise sources (drain/source/gate resistance) EECS 240 Lecture 5: Noise © 2006 A. M. Niknejad and B. Boser 15 FET Noise Model • The resistance of the substrate also generates thermal noise. In most circuits we will be concerned with the noise due to the channel an...
View Full Document

This note was uploaded on 03/18/2014 for the course EECS 240 taught by Professor Boser during the Spring '04 term at Berkeley.

Ask a homework question - tutors are online