Elec4510-hw2-sol

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Unformatted text preview: 3. It is an n-doped wafer as Ef is higher than Ei. ( ) ( Prepare by Mak Tsz Him Mathew, [email protected] ) Page. 1 4. a) b) Ec-Ef = (Ec-Ei) + (Ei-Ef) = (1.12 / 2) + (0.347) = 0.907eV (2 pts) Ef-Ev = (Ei-Ev) - (Ei – Ef) = (1.12 / 2) – (0.347) = 0.213eV (2 pts) c) Ec 0.907eV Ei Ef 0.213eV Ev Diagram 1pt, label 2 pts 5. For p-doping concentration 1018 atom/cm3, the mobility of hole is around 145 cm2/Vs (1 pt) (From the graph in lecture note chapter 3.3 page 9) Hence, t’=t/(1.724x10-6 x 23.2)=25002t, around 25000times of original thickness (1 pt) Prepare by Mak Tsz Him Mathew, [email protected] Page. 2...
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This document was uploaded on 03/19/2014.

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