Unformatted text preview: ssume that no bias is applied.It(Hint: It may to helpful to think of the I
think
regionof the Pregion as a Pthen let the doping concentration approach zero. That is, Nd ≅ Na ≅ 0.)
as a I or N and or N and then let the doping concentration approach zero.
That is, Nd ≅ Na ≅ 0.) (a) Find the depletionlayer wWdep and its and on widths on ) and the P side.
(a) Find the depletionlayer width (idth )(Wdep)widthsits the N side (xnthe N side and the P side.
(b) Calculate the maximum electric field. (b) Calculate the maximum electric field.
(c) Find the builtin potential.
(d) Now assume that a reverse bias is applied. If the critical field for breakdown in
(c) Find the 2 × 105 in/cm, compare the breakdown voltages between the PIN structure
built V potential.
silicon is
and a PN structure (without the I region) with the doping levels shown above. (d) Now assume that a reverse bias is applied. If the critical field for breakdown in silicon is 2 ×
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 Spring '07
 ee130
 Pn junction, Condensed matter physics, diffusion equation, maximum electric field

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