Assume that no bias is appliedithint it may to

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Unformatted text preview: ssume that no bias is applied.It(Hint: It may to helpful to think of the I think regionof the Pregion as a Pthen let the doping concentration approach zero. That is, Nd ≅ Na ≅ 0.) as a I or N and or N and then let the doping concentration approach zero. That is, Nd ≅ Na ≅ 0.) (a) Find the depletion-layer wWdep and its and on widths on ) and the P side. (a) Find the depletion-layer width (idth )(Wdep)widthsits the N side (xnthe N side and the P side. (b) Calculate the maximum electric field. (b) Calculate the maximum electric field. (c) Find the built-in potential. (d) Now assume that a reverse bias is applied. If the critical field for breakdown in (c) Find the 2 × 105 in/cm, compare the breakdown voltages between the P-I-N structure built- V potential. silicon is and a P-N structure (without the I region) with the doping levels shown above. (d) Now assume that a reverse bias is applied. If the critical field for breakdown in silicon is 2 × If interested, you can find more P-I-N diode examples at...
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This homework help was uploaded on 03/29/2014 for the course EE 130 taught by Professor Ee130 during the Spring '07 term at University of California, Berkeley.

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